The Study of Disturbing Mechanism for High PerformancePorous Silicon Films

碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 99 === Abstract In this thesis, the stirring anodization method was firstly proposed to manufacture nanoporous silicon (NPS) material. Two differential stirring apparatuses were adopted to clarify the mechanism of hydrogen...

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Main Authors: Sin-Hong Liou, 劉信宏
Other Authors: Jia-Chuan Lin
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/38912001262704312109
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spelling ndltd-TW-099PCCU01590312015-10-28T04:07:28Z http://ndltd.ncl.edu.tw/handle/38912001262704312109 The Study of Disturbing Mechanism for High PerformancePorous Silicon Films 高品質多孔矽薄膜外加擾動機制之研究 Sin-Hong Liou 劉信宏 碩士 中國文化大學 材料科學與奈米科技研究所 99 Abstract In this thesis, the stirring anodization method was firstly proposed to manufacture nanoporous silicon (NPS) material. Two differential stirring apparatuses were adopted to clarify the mechanism of hydrogen ion motion during the electrochemical etching action in detail. Based on it, the membrane quality of obtained NPS was effectively enhanced. The electrolyte consisting of alcohol and hydrofluoric acid was used as the main etching solution, and the key apparatus of circulating pump was utilized to stir etching solution. Two pump structure designs such as water circulating and air circulating were studied in this work. By the additional setup, an extra hydrogen ion motion was created while etching action was processed. All studied works were performed with p-type silicon wafer, and the traditional method of NPS manufacture was also included for comparison. The measurements including the Maple PL (325 nm He-Cd Laser), 3D-profiler, scanning electron microcopy (SEM) were utilized to understand the utility of stirring method. From the measured SEM results, the membrane qualities of studied NPS sample were effectively improved by using the stirring method. Besides, the uniformities of PL spectra and NPS surface structure were also increased. Compared with traditional anodization method, the stirring method reveals a high potential in NPS manufacture and its related application. Jia-Chuan Lin Chuen-Huei Tsau 林嘉洤 曹春暉 2011 學位論文 ; thesis 95 zh-TW
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description 碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 99 === Abstract In this thesis, the stirring anodization method was firstly proposed to manufacture nanoporous silicon (NPS) material. Two differential stirring apparatuses were adopted to clarify the mechanism of hydrogen ion motion during the electrochemical etching action in detail. Based on it, the membrane quality of obtained NPS was effectively enhanced. The electrolyte consisting of alcohol and hydrofluoric acid was used as the main etching solution, and the key apparatus of circulating pump was utilized to stir etching solution. Two pump structure designs such as water circulating and air circulating were studied in this work. By the additional setup, an extra hydrogen ion motion was created while etching action was processed. All studied works were performed with p-type silicon wafer, and the traditional method of NPS manufacture was also included for comparison. The measurements including the Maple PL (325 nm He-Cd Laser), 3D-profiler, scanning electron microcopy (SEM) were utilized to understand the utility of stirring method. From the measured SEM results, the membrane qualities of studied NPS sample were effectively improved by using the stirring method. Besides, the uniformities of PL spectra and NPS surface structure were also increased. Compared with traditional anodization method, the stirring method reveals a high potential in NPS manufacture and its related application.
author2 Jia-Chuan Lin
author_facet Jia-Chuan Lin
Sin-Hong Liou
劉信宏
author Sin-Hong Liou
劉信宏
spellingShingle Sin-Hong Liou
劉信宏
The Study of Disturbing Mechanism for High PerformancePorous Silicon Films
author_sort Sin-Hong Liou
title The Study of Disturbing Mechanism for High PerformancePorous Silicon Films
title_short The Study of Disturbing Mechanism for High PerformancePorous Silicon Films
title_full The Study of Disturbing Mechanism for High PerformancePorous Silicon Films
title_fullStr The Study of Disturbing Mechanism for High PerformancePorous Silicon Films
title_full_unstemmed The Study of Disturbing Mechanism for High PerformancePorous Silicon Films
title_sort study of disturbing mechanism for high performanceporous silicon films
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/38912001262704312109
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