| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 99 === In this work single-step electrodeposition method was used to deposit four elements simultaneously for the synthesis of Cu(In,Ga)Se2 (CIGS) thin film for solar cell. The experimental parameters consisted of pH value, main metal ion concentration ratio, applied voltage, deposition time, annealing temperature and time. The experiments are carried out repeatedly and an X-ray diffractometer (XRD) and a scanning electron microscope (SEM) were used to analyze the phases and observe the microstructure of deposited film. The results showed that the Cu(In,Ga)Se2 phase was deposited 1.5-2 μm thickness with a preferred plane (112). The optimum parameters for the synthesis an ideal composition ratio of CIGS were pH value of 3.0, applied voltage of -1.4 V, CuCl2 concentration of 7 mM, InCl3 concentration of 30 mM, GaCl3 concentration of 50 mM, H2SeO3 concentration of 5 mM, , deposition time of 3 min. and annealing temperature of 550℃, 30 min.
|
|---|
