Using Hole Transport Material with High Glass Transition Temperature to Enhance the Efficiency and Lifetime of Organic Light-Emitting Diode

• Main Authors: Kuang-Chih Lai, 賴廣志
• Other Authors: 蔡裕勝
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/q228jj

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 99 === In this study, the method for detecting degradation of organic film material, which measured to detect Temp. of hole transport materials (HTG-1、HTG-2). Used polarizing light microscope was observed and captured crystallization of organic film material of images. Hole transport materials (HTG-1 and HTG-2) with high degradation temperature were used to replace NPB (degradation temperature = 110 ℃), and hole injection layer materials (HI-01), incorporated with the electron transport material (Alq3) to produce the green OLED devices, reduced to operate the OLED elements in a long time, the heat generated by components within the organic material to crystallized effect. From the organic thin film heating test results, degradation temperature of HTG-1 is 175 ~ 180 ℃, to improve the thermal stability of organic light-emitting diode (OLED), and adjusted the structure optimization, the component structure: ITO/ HI-01 (60 nm)/ HTG-1 (20 nm)/ Alq3 (50 nm)/ LiF (6 A)/ Al (130 nm), using HTG-1 as hole transport layer and optimizing device structure, OLED device has the luminance efficiency of 4.81 cd/A at the current density of 100 mA/cm2. Demonstrated that employed a high degradation temperature organic material as hole transport layer to improve the thermal stability of OLED can be achieved. Furthermore, to optimize the green device was the base, to dopant the yellow material mixed with blue host, by Alq3 as an electron transport layer, adjusting the proportion of different thickness of layers after the optimum components, the component structure: ITO/ HI-01 (70 nm)/ HTG-1 (20 nm)/ Host：Yellow Dopant 0.75 wt% (60 nm)/ Alq3 (30 nm)/ LiF (6 A)/ Al (130 nm), yellow FLOLED has the luminance efficiency of 15 cd/A and power efficiency of 4.55 lm/W at the current density of 100 mA/cm2，the lifetime achieve to 700 hrs.