Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process

碩士 === 國立臺灣科技大學 === 機械工程系 === 99 === A different approach for co-doping in ZnO using Al-N as dopant has been attempted to realize p-type ZnO. The effect of Al doped ZnO thin films were grown on sapphire (0 0 0 1) substrates using sol-gel method and annealing with ammonia ambient in order to obtained...

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Main Authors: Sheng-Hung Ku, 辜聖閎
Other Authors: Wei-Chun Cheng
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/tp2yam
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spelling ndltd-TW-099NTUS54890472019-05-15T20:42:05Z http://ndltd.ncl.edu.tw/handle/tp2yam Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process 利用溶膠-凝膠法製備p型Al掺雜ZnO:N薄膜並探討其結構、光學與電性質 Sheng-Hung Ku 辜聖閎 碩士 國立臺灣科技大學 機械工程系 99 A different approach for co-doping in ZnO using Al-N as dopant has been attempted to realize p-type ZnO. The effect of Al doped ZnO thin films were grown on sapphire (0 0 0 1) substrates using sol-gel method and annealing with ammonia ambient in order to obtained p-type Al doped ZnO:N thin films were subjected to X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), Raman spectroscopy and Hall measurements. The XRD analysis reveals that all thin films have grown in the form of hexagonal Wurtzite structure with (0 0 0 2) preferential orientation. The FWHM of (0 0 0 2) peak increase till 3 mol % Al doped ZnO:N and increases for further addition of Al-N indicating incorporation of more impurities (dopants). Surface morphology of the films was analyzed using SEM. The PL spectra of three different concentration of p-type Al doped ZnO:N showed a strong UV emission band located at 3.32 eV, 3.33 eV, 3.34 eV respectively and a very weak infrared emission associated with free carrier recombination. Al an N incorporation induced a blue shift of optical band gap and quenching of the near-band-edge PL for thin film because of the band-filling effect of free carrier and nonradiative recombination. In micro- Raman Scattering for doped ZnO film, An increase in the E2 (low) phonon wavenumber is ascribed to increased the Al_Zn^(3+) replaced on the Zn site and increase in the E2 (high) phonon wavenumber due to Al and N doped induced compressive stress. Multiple phonon behaviour was observed up to 3rd order. The electrical properties of Al doped ZnO:N thin films are p type, 3 mol% Al doped ZnO:N thin films with highest hole carrier concentration ~4.91×1018 cm-3, 2 mol% Al doped ZnO:N thin films with highest mobility ~59.0 cm2V-1s-1 and lowest resistivity 0.034 Ω-cm. Wei-Chun Cheng Shien-Uang Jen 鄭偉鈞 任盛源 2011 學位論文 ; thesis 60 zh-TW
collection NDLTD
language zh-TW
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sources NDLTD
description 碩士 === 國立臺灣科技大學 === 機械工程系 === 99 === A different approach for co-doping in ZnO using Al-N as dopant has been attempted to realize p-type ZnO. The effect of Al doped ZnO thin films were grown on sapphire (0 0 0 1) substrates using sol-gel method and annealing with ammonia ambient in order to obtained p-type Al doped ZnO:N thin films were subjected to X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), Raman spectroscopy and Hall measurements. The XRD analysis reveals that all thin films have grown in the form of hexagonal Wurtzite structure with (0 0 0 2) preferential orientation. The FWHM of (0 0 0 2) peak increase till 3 mol % Al doped ZnO:N and increases for further addition of Al-N indicating incorporation of more impurities (dopants). Surface morphology of the films was analyzed using SEM. The PL spectra of three different concentration of p-type Al doped ZnO:N showed a strong UV emission band located at 3.32 eV, 3.33 eV, 3.34 eV respectively and a very weak infrared emission associated with free carrier recombination. Al an N incorporation induced a blue shift of optical band gap and quenching of the near-band-edge PL for thin film because of the band-filling effect of free carrier and nonradiative recombination. In micro- Raman Scattering for doped ZnO film, An increase in the E2 (low) phonon wavenumber is ascribed to increased the Al_Zn^(3+) replaced on the Zn site and increase in the E2 (high) phonon wavenumber due to Al and N doped induced compressive stress. Multiple phonon behaviour was observed up to 3rd order. The electrical properties of Al doped ZnO:N thin films are p type, 3 mol% Al doped ZnO:N thin films with highest hole carrier concentration ~4.91×1018 cm-3, 2 mol% Al doped ZnO:N thin films with highest mobility ~59.0 cm2V-1s-1 and lowest resistivity 0.034 Ω-cm.
author2 Wei-Chun Cheng
author_facet Wei-Chun Cheng
Sheng-Hung Ku
辜聖閎
author Sheng-Hung Ku
辜聖閎
spellingShingle Sheng-Hung Ku
辜聖閎
Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process
author_sort Sheng-Hung Ku
title Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process
title_short Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process
title_full Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process
title_fullStr Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process
title_full_unstemmed Structural, Optical and Electrical Properties of Stable p-type Al Doped ZnO:N Films Using Sol-Gel Process
title_sort structural, optical and electrical properties of stable p-type al doped zno:n films using sol-gel process
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/tp2yam
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