Dual-Frequency Impedance Transformation Technique Incorporated in a 10 and 24 GHz Dual-Band Amplifier

• Main Authors: Kai-An Hsieh, 謝凱安
• Other Authors: Ching-Kuang Tzuang
• Format: Others
• Language: en_US
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/00170418574930656651

碩士 === 國立臺灣大學 === 電信工程學研究所 === 99 === This thesis presents a complete theory of a dual-frequency impedance transformer based on transmission lines. The theoretical analysis is insightfully described, and a limitation from the design equations is investigated. Subsequently, a design procedure is proposed to resolve this situation. To substantiate the theory, a dual-band amplifier operating at 10 and 24 GHz is fabricated by standard 0.13-μm 1P8M CMOS technology. The amplifier involves synthetic quasi-TEM transmission lines to build the dual-frequency matching circuits. The comparisons between simulations and on-wafer measurements are reported to establish the feasibility and flexibility of the presented technique in microwave applications.