Investigation of Ge1-xSnx/Ge with high Sn composition grown at low temperature
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77774823809751561359 |