The Bipolar/MOS SPICE Model Approach for Analyzing 40nm PD SOI NMOS Device Considering Floating-Body Effect

碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === The thesis reports modeling the 40nm PD SOI NMOS device considering floating-body effect via Bipolar/MOS SPICE model approach. Chapter 1 gives a brief introduction about SOI CMOS devices and the scaling trends, including the comparison of the difference between...

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Bibliographic Details
Main Authors: Shang-Wei Fang, 方上維
Other Authors: 郭正邦
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/72788362760183981640