The Bipolar/MOS SPICE Model Approach for Analyzing 40nm PD SOI NMOS Device Considering Floating-Body Effect
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === The thesis reports modeling the 40nm PD SOI NMOS device considering floating-body effect via Bipolar/MOS SPICE model approach. Chapter 1 gives a brief introduction about SOI CMOS devices and the scaling trends, including the comparison of the difference between...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2011
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Online Access: | http://ndltd.ncl.edu.tw/handle/72788362760183981640 |