| Summary: | 博士 === 國立臺灣大學 === 電子工程學研究所 === 99 === In this study, gas source molecular beam Epitaxy（GSMBE）was used to grow GaAsSb/GaAs multiple quantum wells with different compositions at various substrate temperatures. In the X-ray measurements, it was found that the Sb content in quantum well is varied with the As atom and reveals different incorporation behaviors. Strong photoluminescence intensity was observed in the grown quantum wells. The maximum wavelength for the sample is about 1.327μm（0.934eV）, which gives an evidence of application for 1.3μm band range. Moreover, blue shift in the type-II GaAsSb/GaAs quantum well was found.
To predict the results of epitaxy, a growth model is proposed by using the thermodynamic model. For a more accurate growth model for epitaxy, it is necessary to consider the desorption of two Group V elements, a combination of kinetic model and thermodynamic model is then proposed.
For the calculation of the combined theoretical model, it is found the competition between two Group V atoms resulting in different incorporation behaviors and composition curves. The only fitting parameter is also found linearly proportional to the substrate temperature. And the relation is useful for the prediction of the unknown variable.
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