Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells

碩士 === 國立臺灣大學 === 應用物理所 === 99 === In this thesis, we will study a novel semiconductor composite consisting of InGaN/GaN multiple quantum well (MQW) and zinc oxide nanorods, we have found some interesting phenomena. Relying on the piezoelectric-potential created in zinc oxide under strain, which wil...

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Main Authors:	Jyong-Kuen Lian, 連炯堃
Other Authors:	陳永芳
Format:	Others
Language:	en_US
Published:	2011
Online Access:	http://ndltd.ncl.edu.tw/handle/90327833332713699109

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spelling	ndltd-TW-099NTU052010322015-10-16T04:03:09Z http://ndltd.ncl.edu.tw/handle/90327833332713699109 Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells 奈米壓電材料之研究與應用:氧化鋅奈米柱與氮化銦鎵/氮化鎵多重量子井 Jyong-Kuen Lian 連炯堃碩士國立臺灣大學應用物理所 99 In this thesis, we will study a novel semiconductor composite consisting of InGaN/GaN multiple quantum well (MQW) and zinc oxide nanorods, we have found some interesting phenomena. Relying on the piezoelectric-potential created in zinc oxide under strain, which will alter the electric field in MQWs. It will induce the change of photoluminescence spectra and Raman spectra could be changed due to the quantum confined Stark effect. As a result, the composite consisting of InGaN/GaN MQWs and ZnO nanorods has a great opportunity in the development of pressure detectors or strain sensors. 陳永芳 2011 學位論文 ; thesis 49 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立臺灣大學 === 應用物理所 === 99 === In this thesis, we will study a novel semiconductor composite consisting of InGaN/GaN multiple quantum well (MQW) and zinc oxide nanorods, we have found some interesting phenomena. Relying on the piezoelectric-potential created in zinc oxide under strain, which will alter the electric field in MQWs. It will induce the change of photoluminescence spectra and Raman spectra could be changed due to the quantum confined Stark effect. As a result, the composite consisting of InGaN/GaN MQWs and ZnO nanorods has a great opportunity in the development of pressure detectors or strain sensors.
author2	陳永芳
author_facet	陳永芳 Jyong-Kuen Lian 連炯堃
author	Jyong-Kuen Lian 連炯堃
spellingShingle	Jyong-Kuen Lian 連炯堃 Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells
author_sort	Jyong-Kuen Lian
title	Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells
title_short	Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells
title_full	Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells
title_fullStr	Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells
title_full_unstemmed	Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells
title_sort	study and application of nano-piezoelectric materials:zno nanorods and ingan/gan multiple quantum wells
publishDate	2011
url	http://ndltd.ncl.edu.tw/handle/90327833332713699109
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Study and application of nano-piezoelectric materials:ZnO nanorods and InGaN/GaN multiple quantum wells

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