| Summary: | 碩士 === 國立臺灣大學 === 物理研究所 === 99 === In this thesis we use RF sputtering system, preparation of Bi film on the surface of the silica substrate, then prepare different thicknesses of Sb in Bi film, the formation of varying proportions of Bi / Sb bilayers, follow-up for Bi / Sb bilayers after annealing to form different proportions of Bi1-xSbx alloy, because Bi and Sb elements in the same group V and have the same crystal structure, after X-Ray analysis and crystal planes of JCPD database show that Bi / Sb bilayers after annealing have full mutual diffusion of alloy, high-resolution field emission electron micro-probe device (FE-EPMA) measurement shows that the proportion of Bi1-xSbx alloy, we can be one of the known Bi1-xSbx alloy and crystal planes to confirm the proportion of other alloy ratio of Bi1-xSbx. In addition, Bi1-xSbx alloy semimetal-semiconductor transition characteristics depend on the Sb values of Bi1-xSbx alloy, add a small amount of Sb content will have semiconductor properties, and good at low temperature for the n-type thermoelectric cooling materials. In the annealing process use RTA (Rapid Thermal Annealing), the results showed that when reaches 573K for Bi / Sb bilayers after annealing ,the (110) crystal plane is offset, when cooled to different temperatures to annealing, with the Sb content increases, the surface of the grain will be different, the measurement of surface resistance with temperature, appear the characteristics of semiconductor.
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