Amorphous Si-rich Silicon Carbide Thin-Film Photovoltaic Solar Cells
碩士 === 國立臺灣大學 === 光電工程學研究所 === 99 === The non-stoichiometric silicon carbide (Si 1-x C x ) film is prepared by plasmas enhanced chemical vapor deposition with different RF plasmas power from 20 to 100W and fixed substrate temperature at 500oC. According to SIMS analysis, we effectively dec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93012838730710084414 |