Amorphous Si-rich Silicon Carbide Thin-Film Photovoltaic Solar Cells

• Main Authors: Chiao-Ti Lee, 李喬荻
• Other Authors: Gong-Ru Lin
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/93012838730710084414

碩士 === 國立臺灣大學 === 光電工程學研究所 === 99 === The non-stoichiometric silicon carbide (Si 1-x C x ) film is prepared by plasmas enhanced chemical vapor deposition with different RF plasmas power from 20 to 100W and fixed substrate temperature at 500oC. According to SIMS analysis, we effectively decrease the oxygen concentration to 1.1×105 by using three processes Ar purged. However, the carbon content is increased by enhancing the RF plasmas power to 100 W in XPS analysis. Besides, the Si-C signal is significantly observed than others in Si 2p3 and C 1s core level. The C-Si-O signal is decreased with increasing RF plasmas power. According to FTIR analysis, owing to the insufficient RF plasmas power, the Si-CH 3 signal is significant observed in 20 W sample. However, the Si-CH3 signal transform to Si-C by increasing the RF plasmas power. Moreover, considering the optical absorption spectra, the optical absorption oefficient is much broadband and over 105 within visible under 20 W deposition condition. Besides, we also simulate the conversion efficiency of SiC photovoltaic solar cell, which demonstrates 2% conversion efficiency. We optimize the optical absorption spectrum by detuning the fluence ratio, which enhance the optical absorption coefficient within 300 to 500 nm. Afterward, the resistivity of p-type and n-type SiC is decreased to 2.8 and 0.31 Ω∙cm. The conversion efficiency of ITO/P-SiC/i-SiC/n-SiC/Al is increased by reducing the thickness of intrinsic SiC, which declining the series resistance simultaneously. Finally, the conversion efficiency of ITO/P-SiC/ n-SiC/Al is promoted by reducing the thickness of n-type SiC, which decreasing the series resistance to 6 Ω.