| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 99 === In this thesis, to study interdigitated back contact and CIGS based solar cell, we use TCAD sentaurus to simulate characteristics of solar cell. We build the model and try to improve the structure and get better efficiency.
Mostly, the conventional silicon solar cell has front junction near surface. If we change the structure and made all the contact at the back side, the shadow area can be reduced and the absorbed area increased. Therefore higher short circuit current can be reached. The other advantage of all back contact is that the low surface recombination velocity can be achieved easily. For the above reason, the IBC solar cell has high efficiency (>20%).
There are some advantages of LD solar cell: (1) local selective area for emitter or back side field (BSF) can be formed easily without conventional photolithograph process, (2) the process can be fabricated at room temperature for the reduction of thermal stress in the substrate, (3) the atmosphere condition instead of conventional impurity diffusion method at high temperatures. Since the selective area doping can be formed by LD process, the interdigitated back contact (IBC) solar cell is also can be possibly fabricated by this process.
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