| Summary: | 碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 99 === The purpose of this thesis , Fe62Co19Ga19 and/or Ta films were deposited on Si(100) substrates by the DC magnetron sputtering method , five series of Fe62Co19Ga19 films were deposited on Si(100) substrates at room temperature : they were Ta/ Fe62Co19Ga19 (Tf)/Ta/Si(100) ,
Ta/ Fe62Co19Ga19 (Tf)/Si(100) , Fe62Co19Ga19 (Tf)/ Ta/ Si(100) , Fe62Co19Ga19 (Tf)/ Si(100) , Ta/ Fe62Co19Ga19 (Tf)/ Ta(X)/ Si(100) , Where R means the Si substrate was rotated at a speed of 12 r.p.m. , while depositing Fe62Co19Ga19 and Ta ; NR means the Si substrate was not rotated at Ta(X) layer ; the thickness of the Ta capping and/or barrier layer was 5nm ; and Tf ranging from 5 to 207nm , is the thickness of Fe62Co19Ga19 films . We have measured the longitudinal magnetostriction (λ║) and transverse magnetostriction (λ┴) at the saturation field HS for these films . the saturation magnetostriction is defined as λS = (2/3)∆ λ= (2/3)( λ║-λ┴) . The main objective of this work is to study the Ta capping and/or barrier layer effect on λS , HS of the Fe62Co19Ga19 films . The Tf dependence of λS is studied for each series of Fe62Co19Ga19 films .We found that if there is a Ta capping layer , Fe62Co19Ga19 films is reduced , and λS is much enhanced . While if there is a Ta barrier layer , HS is greatly increased . With regard to all the magnetostriction data from this study , we reach the following conclusion : the optimal value for λS is 123ppm . In conclusion, Fe62Co19Ga19 films have chances to apply on magnetic MEMS.
|
|---|
