The research and investigation of the high performance of the ESD protection diode

• Main Authors: Chong-wei Huang, 黃崇偉
• Other Authors: Chu-Yu Chen
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/70627931759585214770

碩士 === 國立臺南大學 === 電機工程研究所 === 99 === This thesis focuses on research and investigation of the characteristic of the ESD protection diodes by using Sentaurus TCAD Simulatior. At first, we proposed the vertical p-n junction diode which is different from the traditional p-n junction diode and it can overcome the high leakage current problem. A good controlling on leakage current can be achieved by growing the lower dopant epitaxial layer on substrate as an isolated layer. On the other hand, the breakdown voltage can be further investigated by adjusting dose and diffusion depth. Finally, the analysis of the capacitance value based on the lateral diffusion lengths is demonstrated.