| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 99 === This study was divided into indium oxide films and powders of two different process methods .About the films experiment, indium films were deposited onto silicon wafer firstly by using indium ingots as evaporate source. Secondly, oxide those films to transform from indium to indium oxide via different oxidation temperature and time controlling in the furnace tube. These samples were investigated with XRD、SEM、AFM and Hall Measurement. The results of films experiment showed that In2O3(2 2 2)intensity rises with oxidation temperature increased, and the conditions of the best quality was holding temperature at 700 ℃for 8 hours , which shows the strongest single peak, and the most smooth surface morphology with uniform particles size. To compare with other methods, this low cost and simply controlled conditions thermal oxidation method can form better quality indium oxide films；the different weight of indium ingots were dissolved in the nitric acid solution, we can get the precipitation of indium-hydroxide powder by changing pH value of the solution, then those powder can change into indium oxide powder by after calcined and dehydration. To investigate via XRD、 SEM、 Raman、TEM . The results showed that we can prepared high-purity indium oxide powder successfully with a simple synthetic method, and can reduce more less cost than other method which use the indium-related compounds as a original source materials.
|
|---|
