Electrical and physical characteristics of MOS devices with high-k gate dielectric and Ge or SiGe channel

碩士 === 國立清華大學 === 工程與系統科學系 === 99

Bibliographic Details
Main Authors: Lee, Yi-Cheng, 李宜政
Other Authors: Chang-Liao, Kuei-Shu
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/85719640066881979186