A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application

碩士 === 國立清華大學 === 電子工程研究所 === 99 === A CMOS image sensor with light intensity filtering feature for realizing image thresholding is proposed. The simple sensing pixel circuit with less than 5 transistors is designed to provide a tunable non-linear photo-response with a peak signal at a specified int...

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Main Authors: Huang, Chia-Chin, 黃家津
Other Authors: King, Ya-Chin
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/24093216789224127252
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spelling ndltd-TW-099NTHU54280282015-10-13T20:04:06Z http://ndltd.ncl.edu.tw/handle/24093216789224127252 A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application 具光照度過濾效果且應用於二值化影像處理之CMOS影像感測器元件 Huang, Chia-Chin 黃家津 碩士 國立清華大學 電子工程研究所 99 A CMOS image sensor with light intensity filtering feature for realizing image thresholding is proposed. The simple sensing pixel circuit with less than 5 transistors is designed to provide a tunable non-linear photo-response with a peak signal at a specified intensity level. This unique intensity-filtering photo-response characteristic is achieved by push/pull forces between an n+/p-sub photo-diode and the parasitic p+/n-well parasitic diode of the PMOS control transistor. With proper timing control of this new pixel circuit, tunable intensity filtering transfer functions can be obtained. Based on the behavior model of the pixel’s photo-response, image thresholding function is successfully demonstrated by this non-linear imager. King, Ya-Chin 金雅琴 2011 學位論文 ; thesis 60 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 電子工程研究所 === 99 === A CMOS image sensor with light intensity filtering feature for realizing image thresholding is proposed. The simple sensing pixel circuit with less than 5 transistors is designed to provide a tunable non-linear photo-response with a peak signal at a specified intensity level. This unique intensity-filtering photo-response characteristic is achieved by push/pull forces between an n+/p-sub photo-diode and the parasitic p+/n-well parasitic diode of the PMOS control transistor. With proper timing control of this new pixel circuit, tunable intensity filtering transfer functions can be obtained. Based on the behavior model of the pixel’s photo-response, image thresholding function is successfully demonstrated by this non-linear imager.
author2 King, Ya-Chin
author_facet King, Ya-Chin
Huang, Chia-Chin
黃家津
author Huang, Chia-Chin
黃家津
spellingShingle Huang, Chia-Chin
黃家津
A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application
author_sort Huang, Chia-Chin
title A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application
title_short A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application
title_full A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application
title_fullStr A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application
title_full_unstemmed A CMOS Active Pixel Sensor with Light Intensity Filtering Characteristics for Image Thresholding Application
title_sort cmos active pixel sensor with light intensity filtering characteristics for image thresholding application
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/24093216789224127252
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