THE CHARACTERIZATIONS OF SURFACE CHARGING AND PREAMORPHIZATION IN POLYSILICON GATE AND ULTRA SHALLOW JUNCTION FORMATION
博士 === 國立清華大學 === 電子工程研究所 === 99 === As the gate length of metal-oxide-semiconductor field-effect transistors (MOSFETs) is of the order of nanometers, it is very difficult to maintain their electrical properties with the different species, accelerated energy and implant dosage. In this thesis, we st...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45518368159788232979 |