Optimization and analysis of Pd/Ge/Ti/Pt ohmic contact on n-InxGa1-xAs (x=0, 0.2 and 0.53)
碩士 === 國立清華大學 === 材料科學工程學系 === 99 === InxGa1-xAs semiconductors are now potential candidates for high-speed complementary metal oxide semiconductor (CMOS) devices due to their high electron mobility. One of the key issues of fabricating high performance CMOS is to lower the contact resistance, which...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78401937195517866485 |