Growth and Characterization of Epitaxial Graphene Grown by Thermal Annealing 6-H SiC(001) and Chemical Vapor Deposition
碩士 === 國立中山大學 === 物理學系研究所 === 99 === This research has discussed the graphene growth mechanism and the achievement, the main purpose is to try the best method to grow graphene which is large size, uniform, and continue. The main issue is about growth and characterizations in full text which is separ...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/42130266422272988067 |