Scanning tunneling microscopy investigations of the N-type LaAlO3/TiO2-SrTiO3 heterostructure

• Main Authors: Wen-Ching Wang, 王文敬
• Other Authors: Ya-Ping Chiu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/45916177922646824871

碩士 === 國立中山大學 === 物理學系研究所 === 99 === The electronic structure at interface between two insulators LaAlO3 and SrTiO3 has been investigated by using scanning tunneling microscopy and spectroscopy. The atomic-scale interfacial band structure is also demonstrated in the work with the consideration of the tip-induced band bending effect. Experimental results indicate that the magnitude of the built-in field across LaAlO3 is 0.075±0.005 V/Å. The band bending on SrTiO3 side at the heterointerface is observed. The band downshift of SrTiO3 side at the interface is 0.1 eV with ~1 nm decay length.