InGaAs Quantum Dots grown by Molecular Beam Epitaxy
碩士 === 國立中山大學 === 光電工程學系研究所 === 99 === In this thesis, we have reported the MBE growth, design, and fabrication of the InGaAs quantum dots (QDs) laser/semiconductor optical amplifier, broadband QDs structure, coupled double cavity structure for terahertz emission on GaAs substrate. The emission wav...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90197754181344616147 |