Implementation and application of a double-gate MOSFET compact model

• Main Authors: Chia-Long Lin, 林佳龍
• Other Authors: Chiang, Menghsuen
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/00702736561428286245

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 99 === Computer-aided design (CAD) is useful for early development of integrate circuits (ICs). SPICE is commonly used in circuit design. In circuit simulation, an analytical and physics-based compact model plays an important role in predicting performance and also issues. Nowadays, there are still no standard multi-gate MOSFETs compact models available in commercial tools. In this paper, we successfully developed a compact model which is focused on undoped symmetric double-gate (DG) MOSFETs using Verilog-A. Starting from Poisson’s equation solved for the undoped channel, surface and center potentials are then calculated by Newton iteration. An analytical drain current expression is derived from Pao-Sah’s double integral method. The model provides flexible parameters and is completely compatible with SPICE-like simulators.