Implementation and application of a double-gate MOSFET compact model
碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 99 === Computer-aided design (CAD) is useful for early development of integrate circuits (ICs). SPICE is commonly used in circuit design. In circuit simulation, an analytical and physics-based compact model plays an important role in predicting performance and also is...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00702736561428286245 |
| Summary: | 碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 99 === Computer-aided design (CAD) is useful for early development of integrate circuits (ICs). SPICE is commonly used in circuit design. In circuit simulation, an analytical and physics-based compact model plays an important role in predicting performance and also issues. Nowadays, there are still no standard multi-gate MOSFETs compact models available in commercial tools.
In this paper, we successfully developed a compact model which is focused on undoped symmetric double-gate (DG) MOSFETs using Verilog-A. Starting from Poisson’s equation solved for the undoped channel, surface and center potentials are then calculated by Newton iteration. An analytical drain current expression is derived from Pao-Sah’s double integral method. The model provides flexible parameters and is completely compatible with SPICE-like simulators.
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