Thermoelectric Properties of (InxSb1-x)2Te3 Crystals Grown by Vertical Bridgman Method
碩士 === 國立東華大學 === 材料科學與工程學系 === 99 === Crystals of (InxSb1-x)2Te3 compounds ( x = 0、0.05、0.1、0.15、0.2、0.25、0.3 ) were grown by vertical Bridgman method. The crystallinity and composition were investigated by X-Ray diffraction, EPMA and Raman spectroscopy techniques and Metallurgical structure ob...
Main Authors: | Jhih-He Chen, 陳致和 |
---|---|
Other Authors: | Qing-Cheng Wu |
Format: | Others |
Language: | zh-TW |
Published: |
2011
|
Online Access: | http://ndltd.ncl.edu.tw/handle/90324097598468593231 |
Similar Items
-
Thermoelectric Properties of (GeTe)x(Bi2Te3)1-x Crystals Grown By Vertical Bridgman Method
by: Hung Fang, et al.
Published: (2011) -
Spectroscopic investigations of polycrystalline InxSb20−xAg10Se70 (0 ⩽ × ⩽ 15) multicomponent chalcogenides
by: Sharma Rita, et al.
Published: (2016-12-01) -
Thermoelectric Properties of (SnTe)m(Bi2Te3)n Crystals Grown by Vertical Bridgman Method
by: Cheng-Fang Su, et al.
Published: (2002) -
Thermoelectric Properties of Pb1-xCdxSe CrystalsGrown by Vertical Bridgman Method
by: Yi-Chieh Chiu, et al.
Published: (2010) -
Properties of Se-incorporated As2Te3 crystals grown by Vertical Bridgman method
by: Chih-Chun Kuo, et al.
Published: (2008)