| Summary: | 碩士 === 國立嘉義大學 === 電子物理學系研究所 === 99 === Aluminum induced layer exchange (ALILE) process has been discussed for years not only for engineering applications but also for scientists. Due to ALILE technique can be widely apply on thin film electronics such as Thin Film Transistors (TFT) or thin films photovoltaic devices. Moreover, the forces that drive aluminum induce layer exchange also attracts scientific attentions, this phenomenon cannot be well explained by diffusion concepts, so that the mechanism should be clarified and investigated.
This thesis consider aluminum induce layer exchange on foreign substrate. With particular devotion to prepare p-i-n junction on the polycrystalline seed layer and form polycrystalline solar cell. The thesis is divided into two parts: The first part of the thesis, thermodynamic theory of aluminum induced layer exchange has been discussed. While the second part focused on the application of ALILE, which deal with the material properties and the corresponding response on the solar cell.
To realize aluminum induced layer exchange, experimental approach had been applied in the first part. The influences of processing condition on the crystalline and electrical properties are studied in detail in this thesis. Furthermore, the physical mechanisms are also discussed. Based on these finding, polycrystalline thin film solar cell can be realized by epitaxial thickening on the poly-Si seed layer. Also the properties of the solar cell are discussed in more detail
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