Gallium-doped zinc oxide thin films applied to polymer light-emitting diodes
碩士 === 國立嘉義大學 === 電子物理學系研究所 === 99 === In this experiment, the GZO films on glass substrate were prepared by pulsed laser deposition at various substrate temperatures. Conducting atomic force microscopy and scanning surface potential microscopy were adopted to study the nanoscale surface electrical...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86819737815649122188 |
| Summary: | 碩士 === 國立嘉義大學 === 電子物理學系研究所 === 99 === In this experiment, the GZO films on glass substrate were prepared by pulsed laser deposition at various substrate temperatures. Conducting atomic force microscopy and scanning surface potential microscopy were adopted to study the nanoscale surface electrical properties of GZO films. When the substrate temperature was approximately set to 250℃, the conductive region of GZO surface is about 95% and average work function is about 4.72eV. After applying it into the polymer light-emitting diodes (PLEDs) as an anode material, the electroluminescent efficiency is better than that of the standard PLEDs which is based on a commcial indium tin oxide substrate. This result demonstrates that the quality of GZO film is enough to become a mainstream window material for PLEDs.
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