| Summary: | 碩士 === 國立彰化師範大學 === 光電科技研究所 === 99 === In this study, photovoltaic property of the conducting polymer/n-type Si (PEDOT:PSS/n-Si) diode was examined. In the dark, it is shown that the ultraviolet (UV) treatment may lead to an increase in the current density measured at positive voltage, owing to the reduction in the resistance of PEDOT:PSS. However, the current density measured at negative voltage for PEDOT:PSS/n-Si diode with UV treatment is similar to that for PEDOT:PSS/n-Si diode without UV treatment. In addition, it is found that the dominant conduction mechanism is the Schottky emission for PEDOT:PSS/n-Si diode. The difference between the barrier heights of PEDOT:PSS/n-Si diode with and without UV treatment is negligible. Under illumination (AM 1.5G,100 mW/cm2), the electrical characteristics of the PEDOT:PSS/n-Si diode with UV treatment show the short circuit current density (JSC) is higher than the PEDOT:PSS/n-Si diode without UV treatment. This is because of the reduction in the series resistance (RS) of the PEDOT:PSS/n-Si diode. RS does not affect VOC of the solar cell, this suggest UV treatment does not affect VOC of the device. Based on the result of capacitance–voltage measurements, we suggested that UV treatment may lead to a decreased number of charge-trapping-related defects, thus increasing conductivity of PEDOT:PSS. On the other hand, the reflectance of the diode with UV treatment is slightly lower than the diode without UV treatment indicated that UV treatment has more significant contribution to the increase in internal power conversion efficiency.
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