Optical and electrical characterization of the III-V films and high electron mobility transistor structures

Optical and electrical characterization of the III-V films and high electron mobility transistor structures

碩士 === 國立彰化師範大學 === 電子工程學系 === 99 === We present the optical and electrical studies of III-V compound semiconductors and high electron mobility transistor (HEMT) structures using temperature-dependent photoluminescence (PL), reflectance (R), absorption, and Hall measurement. these samples were grown...

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Bibliographic Details
Main Author:	郭家麟
Other Authors:	林得裕
Format:	Others
Language:	zh-TW
Published:	2011
Online Access:	http://ndltd.ncl.edu.tw/handle/92545213149078329092

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