磁金氧半導體結構中之電子傳輸研究
碩士 === 國立彰化師範大學 === 物理學系 === 99 === In this study，a series of lateral junctions consisting of Ni80Fe20/Al2O3/p-SOI/Al2O3/Ni80Fe20 have been investigated for understanding the electrons transport properties at the interface。Devices with various conducting channel lengths between two electrodes were f...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19302816535983873120 |
| Summary: | 碩士 === 國立彰化師範大學 === 物理學系 === 99 === In this study，a series of lateral junctions consisting of Ni80Fe20/Al2O3/p-SOI/Al2O3/Ni80Fe20 have been investigated for understanding the electrons transport properties at the interface。Devices with various conducting channel lengths between two electrodes were fabricated using a top-down technique. An ion beam sputtering was used for the required film stack and an electron beam lithography in combination with ion beam etching technique were adopted for patterning. The current-voltage measurements reveal a remarkable phenomenon of current enhancement, indicating a formation of the interface state in such devices. This transport behavior associated with trapping assistance has also been demonstrated with a fitting based on Poole-Frenkel effect. The results also show that a transition from trapping assisted process to direct tunneling process occurs when the semiconducting channel length is below 1 um. In addition, the direct tunneling behavior may be suppressed with increasing the thickness of the oxide layer. The quality of the oxide layer becomes more important when the device size scales down。
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