| Summary: | 碩士 === 國立彰化師範大學 === 物理學系 === 99 === In the experiment we used the sol-gel process to make a transparent oxidizing product called the Indium Zinc Oxide (InZnO) thin film transistors; doped with small quantities of high-activated alkaline earth metals : magnesium (Mg) and calcium (Ca). By doping with magnesium and calcium, It enhances the thin film transistors’ characteristics and properties. The characteristics and properties effect on Indium Magnesium Zinc Oxide (InMgZnO) and on Indium Calcium Zinc Oxide (InCaZnO) and their channel length will be discussed.Oxygen vacancy may occur in the metal oxidized thin film. If the metal oxidized thin film transistor is exposed to air, it may cause unstable reactions to occur.
We control quantities of magnesium and calcium. These cations can change the quantities of oxygen vacancies that supply free electrons in multicomponent oxidized thin films because they have stronger oxygen affinity and a lower standard electrode potential (SEP E0) for combining with oxygen. Magnesium(1.31) and calcium(1.0) have lower electronegativity than oxygen(3.4), the bond strength of Mg-O and Ca-O is strong.
We know that the electric properties of the device may vary depending on the time and doping concentration, we use X-ray photoelectron spectroscopy (XPS) to describe oxygen 1s peak variations of time and doping concentration.
|
|---|
