Deposition of vertically aligned carbon nanotube for interconnect application

• Main Authors: Zai-Hao Chen, 陳致豪
• Other Authors: Biing-Hwa Yan
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/36844767885347614828

碩士 === 國立中央大學 === 機械工程研究所 === 99 === This research is using low temperature chemical vapor deposition (LTCVD) to grow carbon nanotubes (CNTs) for interconnect application. We use integrated-circuit (IC) photolithography to manufacture the structure of interconnect via in silicon wafer, than development of hydrogen/ammonia plasma pretreatment for transforming Ni film into small and dense catalytic nanoparticles to growth of carbon nanotubes (CNTs) with nickel (Ni) catalyst on (TiN) layer by thermal CVD system with ethanol precursor. We design a single-via and array-via to grow carbon nanotubes (CNTs), finally, deposit Ti to connect with CNTs to accomplish CNT diode structure and make I-V system to analysis diode structure. Use diode structure before ,we were used of SEM, Raman spectroscopy and TEM system to analysis plasma pretreatment and CNT growth parameters on the blanket substrate. We find out that carbon nanofibers (CNFs) diameter increases with the catalyst thickness. The carbon nanotubes (CNTs) decreases with plasma pretreatment, H2 plasma has higher etching effect than NH3 plasma. Low plasma and bias power with proper hydrogen flow rate are essential to transform thin Ni film into small and dense nanoparticles by the plasma pretreatment. Small nickel particles require less carbon source for CNT growth. Dense carbon nanotubes (CNTs) were attained by the conditions : plasma pretreatment (NDL)─ ICP = 100 W, Bias = 50 W, Pressure = 100 mtorr, H2/Ar = 100/20 sccm, Temp.= 400 ℃, Time = 3 min.；CNT growth ─ Pressure = 760 torr, Ar/H2/Are = 400/100/100 sccm, Temp. = 550 ℃. Dense carbon nanotubes (CNTs) were attained by the conditions : plasma pretreatment (中山大學) ─ ICP = 100 W, Bias = 100 W, Pressure = 20 mtorr, H2/N2 = 100/20 sccm, Temp.= 350 ℃, Time = 3 min.；CNT growth ─ Pressure = 760 torr, Ar/H2/Are = 485/15/100 sccm, iv Temp. = 550 ℃.