Formation and characterization of three-dimensional Ge QDs array on nano-patterned SiGe pillar structures
碩士 === 國立中央大學 === 電機工程研究所 === 99 === The main theme of the thesis is to develop a COMS compatible process of three-dimensional (3D) germanium quantum dots (Ge QDs) array system. Using a simple method, “selectivity oxidation of polycrystalline SiGe” to form Ge QDs, combined with design and experiment...
Main Authors: | Ching-Chi Wang, 王慶奇 |
---|---|
Other Authors: | Pei-Wen Li |
Format: | Others |
Language: | zh-TW |
Published: |
2011
|
Online Access: | http://ndltd.ncl.edu.tw/handle/24012147781874601618 |
Similar Items
-
Research on Strain-relaxation in Hydrogen-Implanted SiGe/Si Heterostructure and Fabrication of SiGe Nano-Wire Arrays
by: Chi-An Chueh, et al.
Published: (2009) -
SiGe Nanostructures for Thermoelectric Microcooler Applications
by: Ching-Chi Wang, et al.
Published: (2017) -
Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices
by: M. Hijazi, et al.
Published: (2016-06-01) -
Ge(SiGe)-on-Insulator Technology and SiGe Nanostructure Epitaxial Growth
by: Cheng-Yeh Yu, et al.
Published: (2006) -
Liguid Phase Epitaxy of Ge Nano QDs on Si Substrate
by: YOU, KAI-MAO, et al.
Published: (2017)