Band gap structure of ZnSeO alloys

• Main Authors: Chiwen Lai, 賴麒文
• Other Authors: Tzu-Min Hsu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/35718770479941769873

碩士 === 國立中央大學 === 物理研究所 === 99 === This thesis mainly focuses on the direct band gap analysis of ZnSe1-xOx alloys (x=0~0.07) through photoreflectance (PR) spectroscopy and photoluminescence (PL) spectroscopy. The band gap of alloys decreases significantly with increasing oxygen concentration at room temperature, which agrees with the band anticrossing model (BAC). In higher temperature range (150~300K), the BAC model well predicts the oxygen concentration which consists with experimental results under X-Ray diffraction (XRD) examination. However, when the temperature is under 150K, BAC model underestimates the drastic band gap tendency which is closer to the behavior of the host material ZnSe. This deviation from BAC model may associate with the localized state properties of ZnSe1-xOx alloys.