Interfacial Reactions of Periodic Ni Nanodot Arrays on Epitaxual Si:C Layers and The Fabrication of Single Crystalline Silicon Nanostructure Arrays.

• Main Authors: Yu-chung Tseng, 曾昱中
• Other Authors: Shao-Liang Cheng
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/61518792096226458306

碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 99 === 　The present study has demonstrated that well-ordered arrays of polystyrene(PS) nanosphere were successfully fabricated on (001)Si and (001)Si0.976C0.024 substrates by using the LB-like and/or drop-coating technique. The self-assembled PS nanosphere arrays were used as the deposition templates. 　After Ni thin film deposition and subsequent removal of the PS nanosphere templates, periodic Ni nanodot arrays were formed. For the samples annealed at 350℃, low-resistivity NiSi nanodots were observed to form on the (001)Si0.976C0.024 substrate. Furthermore, even after annealing at 500℃, the low-resistivity NiSi phase wewe still detected in the Ni nanodots/Si:C sample. As the annealing temperature was increased to 600℃, the nanodots grown on (001)Si0.976C0.024 substrates were then transformed to high- resistivity NiSi2 phase completely. The observed results revealed that the phase stability of NiSi nanodots was significantly improved by the addition of C to Si substrate. For the Ni nanodot samples further annealed at 900 ℃, many SiOx nanowires of 14-20 nm in diameter were observed to grow from the NiSi2 nanodot regions. The growth process of amorphous SiOx nanowires could be explained by the solid–liquid–solid (SLS) mechanism. 　By combining the nanosphere template and selective chemical etching, large-area size and height-tunable Si nanoring-like nanostructure arrays were successfully fabricated on (001)Si substrates.