Study on active touch sensing circuit implemented by dual gate IGZO TFTs

碩士 === 國立交通大學 === 顯示科技研究所 === 99 === The dual gate IGZO TFT is proposed to be used in an active matrix touch sensing circuit with a RC low-pass filter. Since the dual gate IGZO TFT can be controlled by both its top and bottom gates, only one TFT is needed in the proposed circuit, which enlarges the...

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Bibliographic Details
Main Author: 李政哲
Other Authors: 戴亞翔
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/04783660949381952379
Description
Summary:碩士 === 國立交通大學 === 顯示科技研究所 === 99 === The dual gate IGZO TFT is proposed to be used in an active matrix touch sensing circuit with a RC low-pass filter. Since the dual gate IGZO TFT can be controlled by both its top and bottom gates, only one TFT is needed in the proposed circuit, which enlarges the open ratio of sensing pixel. By a touch event which increases the RC time-constant, a significant transient ON current is generated to be the sensing signal. This signal can be easily read out and thus reduce the cost of peripheral ICs. In addition, this sensor consumes less standby power because no signal current occurs if it is not touched. In such design, it makes considerable improvement over the drawbacks of previous touch sensing technology. Thus, we believe the proposed sensing circuit could be an excellent way to implement active matrix touch panels.