DEVELOPMENT OF NANO PROBING AND PASSIVE VOLTAGE CONTRAST TECHNIQUES FOR THE FAILURE ANALYSIS OF MOSFET

• Main Author: 林定弘
• Other Authors: 柯富祥
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/03850448298449752390

碩士 === 國立交通大學 === 理學院碩士在職專班應用科技學程 === 99 === This study pays more attention to understand the reason of defect deterioration on device performance. The state-of-the-art nano probing and passive voltage contrast techniques are established for the failure analysis of MOSFET. We successfully address some of the subtle defects of which seriously influencing the yield of integrated circuits. The developed technique equipped with the nano probing and electrical capability can effectively isolate and characterize the actual site of failed transistors of the malfunctioned devices. As a result, the proposed identification process can identify the failure mechanisms and the root cause. In addition, the electrical characterization at the transistor level also offers an appropriate solution for the following physical analysis to “visualize” the defects. Our study provides a feasible way for the semiconductor manufacturing to target the unpredictable defect site by means of nano probing and passive voltage contrast techniques in the future.