Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors

碩士 === 國立交通大學 === 光電工程學系 === 99 === Solution-processed ZrInZnO (ZIZO) semiconductors have been fabricated as the channel material for thin film transistors (TFTs). As the amount of Zr content increased, the off current decreased. The ZIZO TFTs fabrication with the ratio of Zr: In: Zn = 0.1: 5: 5 exh...

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Main Author: 鍾亞衛
Other Authors: 陳方中
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/48134419216321967650
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spelling ndltd-TW-099NCTU56141582015-10-13T20:37:26Z http://ndltd.ncl.edu.tw/handle/48134419216321967650 Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors 以溶液製程製作鋯銦鋅氧化物半導體薄膜電晶體 鍾亞衛 碩士 國立交通大學 光電工程學系 99 Solution-processed ZrInZnO (ZIZO) semiconductors have been fabricated as the channel material for thin film transistors (TFTs). As the amount of Zr content increased, the off current decreased. The ZIZO TFTs fabrication with the ratio of Zr: In: Zn = 0.1: 5: 5 exhibited a field effect mobility of 3.8 cm2/Vs, an on-off ratio of ~107, a threshold voltage (Vth) of 0.44 V and the subthreshold swing of 0.42 V/dec. The threshold voltage also became stable under the bias stress. We found that the ZIZO thin film was amorphous. However, when pre-annealing temperature increased, the degree of micro-crystallization was improved. We interred that the Zr effectively controlled the oxygen vacancies and supplied the concentration of free electron. X-ray photoelectron spectroscopy verified that the oxygen 1s peak decreased with the Zr increasing content. Therefore, it proved that oxygen vacancies decreased with adding the Zr. In addition, we found that adding NaOH could make the ZIZO thin film more stable and accelerate the chemical sol-gel reaction. Overall the device performance is almost comparable with that of the device made by conventional cosputtering methods. 陳方中 2011 學位論文 ; thesis 54 zh-TW
collection NDLTD
language zh-TW
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sources NDLTD
description 碩士 === 國立交通大學 === 光電工程學系 === 99 === Solution-processed ZrInZnO (ZIZO) semiconductors have been fabricated as the channel material for thin film transistors (TFTs). As the amount of Zr content increased, the off current decreased. The ZIZO TFTs fabrication with the ratio of Zr: In: Zn = 0.1: 5: 5 exhibited a field effect mobility of 3.8 cm2/Vs, an on-off ratio of ~107, a threshold voltage (Vth) of 0.44 V and the subthreshold swing of 0.42 V/dec. The threshold voltage also became stable under the bias stress. We found that the ZIZO thin film was amorphous. However, when pre-annealing temperature increased, the degree of micro-crystallization was improved. We interred that the Zr effectively controlled the oxygen vacancies and supplied the concentration of free electron. X-ray photoelectron spectroscopy verified that the oxygen 1s peak decreased with the Zr increasing content. Therefore, it proved that oxygen vacancies decreased with adding the Zr. In addition, we found that adding NaOH could make the ZIZO thin film more stable and accelerate the chemical sol-gel reaction. Overall the device performance is almost comparable with that of the device made by conventional cosputtering methods.
author2 陳方中
author_facet 陳方中
鍾亞衛
author 鍾亞衛
spellingShingle 鍾亞衛
Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors
author_sort 鍾亞衛
title Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors
title_short Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors
title_full Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors
title_fullStr Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors
title_full_unstemmed Solution-Processed ZrInZnO Semiconductor for Thin Film Transistors
title_sort solution-processed zrinzno semiconductor for thin film transistors
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/48134419216321967650
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