| Summary: | 碩士 === 國立交通大學 === 光電工程學系 === 99 === Solution-processed ZrInZnO (ZIZO) semiconductors have been fabricated as the channel material for thin film transistors (TFTs). As the amount of Zr content increased, the off current decreased. The ZIZO TFTs fabrication with the ratio of Zr: In: Zn = 0.1: 5: 5 exhibited a field effect mobility of 3.8 cm2/Vs, an on-off ratio of ~107, a threshold voltage (Vth) of 0.44 V and the subthreshold swing of 0.42 V/dec. The threshold voltage also became stable under the bias stress. We found that the ZIZO thin film was amorphous. However, when pre-annealing temperature increased, the degree of micro-crystallization was improved. We interred that the Zr effectively controlled the oxygen vacancies and supplied the concentration of free electron. X-ray photoelectron spectroscopy verified that the oxygen 1s peak decreased with the Zr increasing content. Therefore, it proved that oxygen vacancies decreased with adding the Zr. In addition, we found that adding NaOH could make the ZIZO thin film more stable and accelerate the chemical sol-gel reaction. Overall the device performance is almost comparable with that of the device made by conventional cosputtering methods.
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