Study of Optical Properties of GaN/AlN Nanostructures

Study of Optical Properties of GaN/AlN Nanostructures

碩士 === 國立交通大學 === 光電工程學系 === 99 === In this study, we studied the optical properties of GaN/AlN nanostructures grown on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD). By atomic force microscopy (AFM), nano-rod-like structures were observed on the surface. In r...

Full description

Bibliographic Details
Main Authors:	Huang, Po-Kai, 黃柏凱
Other Authors:	Lu, Tien-Chang
Format:	Others
Language:	en_US
Published:	2011
Online Access:	http://ndltd.ncl.edu.tw/handle/75019683094197175785

Similar Items

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
by: Ho Xin Jing, et al.
Published: (2019-03-01)

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
by: Che Abdullah, C.A, et al.
Published: (2019)

The study of microstructures and electrical properties of the interface of AlN/GaN
by: Kuo-Hsu Shen, et al.
Published: (2001)

Effects of AlN interlayer on the properties of AlGaN/GaN HEMT structures
by: Jun Xiang Liang, et al.
Published: (2013)

Growth of GaN and AlN on Compliant Substrates
by: Ming-Jui Lee, et al.
Published: (2015)

Electroreflectance spectra of AlGaN/AlN/GaN heterostructure
by: Sheng-Chih Wang, et al.
Published: (2008)

AlN/GaN MOS-HEMTs technology
by: Taking, Sanna
Published: (2012)

The Study of the Effect of AlN/GaN Multi-layers on the Dislocation Density of GaN Films
by: 葉振隆
Published: (2001)

Optimization of GaN and AlN epilayer for HEMT application
by: Lee, Yuan-Jyun, et al.
Published: (2018)

Growth of GaN on Patterned AlN on Sapphire Substrate
by: Hung, Shang-Shih, et al.
Published: (2019)

AlN Buffer Layer Application of the GaN LED
by: Yung Yu Fan Chiang, et al.
Published: (2010)

Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures
by: I.V. Boyko, et al.
Published: (2020-09-01)

Study of GaN-based surface emitting lasers with AlN/GaN distributed Bragg reflectors
by: Chen, Shih-Wei, et al.
Published: (2010)

Electrical and optical properties of GaN nanostructures
by: Wen-HueiChu, et al.
Published: (2011)

Determination of built-in electric field of AlGaN(/AlN)/GaN HEMT
by: Kun-Jia Hsieh, et al.

First-principles study of structural, electronic and optical properties of AlN, GaN, InN and BN compounds
by: Al-Sardia, Mowafaq Mohammad Kethyan
Published: (2013)

MOVPE Growth of AlN and AlGaN/AlN Quantum Wells and their Optical Polarization Properties
by: BANAL, RYAN GANIPAN
Published: (2009)

Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes
by: Hogyoung Kim, et al.
Published: (2020-05-01)

Control of electrical properties of AlN/GaN heterostructure by varying interfacial treatment
by: Hsing, Meng-Lun, et al.
Published: (2019)

The Features of Phase Stability of GaN and AlN Films at Nanolevel
by: Ilya V. Chepkasov, et al.
Published: (2021-12-01)

Investigation of AlGaN/AlN/GaN-Based High Electron Mobility Transistors
by: Chung Cheng-Chiang, et al.
Published: (2014)

Optical Studies on InGaN/GaN Nanostructures
by: Tzu-Chi Liu, et al.
Published: (2008)

Characterization of GaN films and AlN/GaN superlattice grown by radio-frequency molecular beam epitaxy
by: Sheng-Li Lu, et al.
Published: (2005)

Study of Ultraviolet GaN-based Lasers with AlN/AlGaN Distributed Bragg Reflectors
by: Chen, Cheng-Chang, et al.
Published: (2011)

Studies of GaN thin films and InGaN/GaN quantum wells on Si substrates with AlN buffer layers
by: Wei-shiang Su, et al.
Published: (2012)

AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications
by: Chih-Kai Wang, et al.
Published: (2008)

GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer
by: Sheng-Po Chang
Published: (2012-01-01)

Polarization properties in grating-gated AlN/GaN HEMTs at mid-infrared frequencies
by: Cai, M., et al.
Published: (2022)

Comparison of Optoelectronic Characteristics of GaN-Based P-I-N Photodiodes with Low-Temperature-Grown GaN/AlN interlayer(s)
by: Chung-Yi Huang, et al.
Published: (2007)

Fabrication and Characterization of T-gate AlIn(Ga)N/AlN/GaN High Electron Mobility Transistors
by: En-Shuo Lin, et al.
Published: (2018)

Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure
by: Qun Li, et al.
Published: (2015-01-01)

Atomistic Modeling of AlN/GaN HEMTs for Applications in Harsh Environments
by: John, Dylan Boone
Published: (2011)

Design and Fabrication of AlN/GaN/InAlN Field Effect Transistor
by: Shih-En Yeh, et al.
Published: (2013)

Investigation of GaN-based Light-Emitting Diodes with AlN Film
by: Chang, Chun-Chieh, et al.
Published: (2012)

Modeling of GaN/AlN heterostructure-based nano pressure sensors
by: Sinha, Niraj, et al.
Published: (2010)

High-quality NbN nanofilms on a GaN/AlN heterostructure
by: Diane Sam-Giao, et al.
Published: (2014-10-01)

Study of AlN Layers for Current and Optical Confinement in GaN-based Microcavity Light Emitting Diodes
by: Ｗu, Yun-Lin, et al.
Published: (2011)

Optical properties of AlGaN/GaN heterostructures
by: Jheng-Wei Lee, et al.
Published: (2008)

Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
by: Anas Kamarundzaman, et al.
Published: (2021-05-01)

The study of GaN MIS-HEMT power device with AlN stack layer
by: Tao, Tai-Ran, et al.
Published: (2019)

Cannot write session to /tmp/vufind_sessions/sess_7t8iv9vu0atqnblkue34s9jj0e