Development of Tandem Thin-Film Silicon Solar Cells by Plasma-Enhanced Chemical Vapor Deposition

• Main Authors: Lee, Chien-Ya, 李建亞
• Other Authors: Tsai, Chuang-Chuang
• Format: Others
• Language: en_US
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/87907529828326516057

碩士 === 國立交通大學 === 光電工程學系 === 99 === In this study, the major objective is to develop silicon based tandem solar cell. There are two directions to achieve this objective: development of a-Si:H / a-Si:H tandem solar cell and deposition and characteristic of the intrinsic μc-Si:H thin film to fabricate a-Si:H / μc-Si:H tandem solar cell. Both a-Si:H and μc-Si:H were deposited by plasma-enhanced chemical vapor deposition (PECVD) system at 27.12 MHz In the part of a-Si:H / a-Si:H tandem solar cell, we varied the thickness of top cell to achieve current matching. Beside, the band-gap profiling is used in buffer grading to improve short-circuit current density (Jsc). μc-Si:H n-layer is applied in tunneling recombination junction (TRJ), it shows no reverse electric field against the built-in voltage of top and bottom cell compared with the TRJ with μc-Si:H n-layer. In the part of intrinsic μc-Si:H thin film deposition, The effect of total flow rate, power and hydrogen dilution ratio on intrinsic μc-Si:H thin film characteristic has been studied. The μc-Si:H thin films were deposited under high pressure and high power condition. The transition region from a-Si:H to μc-Si:H shows a good material characteristic both in X-ray diffraction spectroscopy (XRD) and photosensitivity.