| Summary: | 碩士 === 國立交通大學 === 光電工程學系 === 99 === In this study, the major objective is to develop silicon based tandem solar cell.
There are two directions to achieve this objective: development of a-Si:H / a-Si:H
tandem solar cell and deposition and characteristic of the intrinsic μc-Si:H thin film to
fabricate a-Si:H / μc-Si:H tandem solar cell. Both a-Si:H and μc-Si:H were deposited
by plasma-enhanced chemical vapor deposition (PECVD) system at 27.12 MHz
In the part of a-Si:H / a-Si:H tandem solar cell, we varied the thickness of top
cell to achieve current matching. Beside, the band-gap profiling is used in buffer
grading to improve short-circuit current density (Jsc). μc-Si:H n-layer is applied in
tunneling recombination junction (TRJ), it shows no reverse electric field against the
built-in voltage of top and bottom cell compared with the TRJ with μc-Si:H n-layer.
In the part of intrinsic μc-Si:H thin film deposition, The effect of total flow rate,
power and hydrogen dilution ratio on intrinsic μc-Si:H thin film characteristic has
been studied. The μc-Si:H thin films were deposited under high pressure and high
power condition. The transition region from a-Si:H to μc-Si:H shows a good material
characteristic both in X-ray diffraction spectroscopy (XRD) and photosensitivity.
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