The Growth of Non-polar GaN Substrate by HVPE
碩士 === 國立交通大學 === 電子物理系所 === 99 === In this research, we obtained the non-polar GaN substrate with a thickness of 225um successfully by hydride vapor phase epitaxy(HVPE) using a three-step method which included growing a GaN thick film on the template grown by metalorganic chemical vapor deposition(...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44539612923291815755 |