A Study on Wrapped-Select-Gate SONOS-type Thin Film Transistor Memory Devices

碩士 === 國立交通大學 === 電子物理系所 === 99 === For the first time, we proposed the novel Wrapped-Select-Gate (WSG)SONOS-type thin film transistor (TFT) memory device. The fabrication process ofWSG structure memory device is not only simple but also compatible to conventionalstandard CMOS technology which f...

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Bibliographic Details
Main Authors: Hsueh, Fang-Chang, 薛芳昌
Other Authors: Chao, Tien-Sheng
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/47620839323119548077

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