A Study on Wrapped-Select-Gate SONOS-type Thin Film Transistor Memory Devices
碩士 === 國立交通大學 === 電子物理系所 === 99 === For the first time, we proposed the novel Wrapped-Select-Gate (WSG)SONOS-type thin film transistor (TFT) memory device. The fabrication process ofWSG structure memory device is not only simple but also compatible to conventionalstandard CMOS technology which f...
Main Authors: | Hsueh, Fang-Chang, 薛芳昌 |
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Other Authors: | Chao, Tien-Sheng |
Format: | Others |
Language: | en_US |
Published: |
2011
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Online Access: | http://ndltd.ncl.edu.tw/handle/47620839323119548077 |
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