Compact Physical-Based Model and Applications of Dynamic-Threshold-Metal-Oxide-Semiconductor
博士 === 國立交通大學 === 電子物理系所 === 99 === First, we use the maximum transconductance linear extrapolated method to extract VTH of DTMOS. It can largely reduce drafting time of extracting VTH of DTMOS by using this method. Furthermore, we lead the equivalent potential concept into DTMOS to indicate the cha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95516093170029989045 |