3D Atomistic Simulation of Single Charge Induced Threshold Voltage Fluctuation on VLSI Devices

• Main Authors: Wang, Ming-Wei, 王明瑋
• Other Authors: Wang, Ta-hui
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/28503336134709816771

碩士 === 國立交通大學 === 電子研究所 === 99 === ISE-TCAD is used to discuss random telegraph noise (RTN) on different VLSI devices in this report. We abandon the old method of 2-Dimensional uniform doping in devices and introduce a concept of 3-Dimensional “ atomistic ” doping. We successfully simulated single charge characteristic in devices, including most representative percolation behavior. We also predict single charge behavior in MOSFETs with different dimension, doping concentration and electron density. Besides, we offer explanations to the influence of bulk voltage and pocket implant on single charge behavior. At last we do a discussion on high k CMOS and SONOS flash memory with single charge behavior. We find out no matter on what devices, single charge statistical behavior is the same. They all follow percolation theory.