A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination

碩士 === 國立交通大學 === 電子研究所 === 99 === Conventional laser diode drivers adopt passive back-termination as impedance matching; however it consumes additional power on passive load. In this thesis we propose a new active back-termination for laser driver. It consumes less power dissipation compared to con...

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Main Authors: Su, Kai-Ti, 蘇凱悌
Other Authors: Chen, Wei-Zen
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/70861542907795658014
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spelling ndltd-TW-099NCTU54281422015-10-13T20:37:09Z http://ndltd.ncl.edu.tw/handle/70861542907795658014 A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination 一個 4-PAM 20-Gbps 具有可調主動式阻抗匹配電路之雷射二極體驅動電路 Su, Kai-Ti 蘇凱悌 碩士 國立交通大學 電子研究所 99 Conventional laser diode drivers adopt passive back-termination as impedance matching; however it consumes additional power on passive load. In this thesis we propose a new active back-termination for laser driver. It consumes less power dissipation compared to conventional driver with passive back-termination. Moreover, for pervasive adaptation, the active back-termination is tunable with reference resistor to match the characteristic impedance of transmission line. At the meantime, we use a pre-distortion circuit to compensate the on/off asymmetry of the laser diode. In order to achieve a higher data rate under the bandwidth limitation, the quadri-pulse amplitude modulation is used. In this way the total data rate is doubled under the same bandwidth. The Gray code is adopted to reduce the bit error rate (BER), since there is only one-bit changed between different levels. The laser diode driver is fabricated in TSMC 90nm CMOS process. Under 1.2Vand1.8V supply, the delivered data rate can reach 16Gbps, power consumption is about 100mW, and the die area is 0.53mm2. Chen, Wei-Zen 陳巍仁 2011 學位論文 ; thesis 84 en_US
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description 碩士 === 國立交通大學 === 電子研究所 === 99 === Conventional laser diode drivers adopt passive back-termination as impedance matching; however it consumes additional power on passive load. In this thesis we propose a new active back-termination for laser driver. It consumes less power dissipation compared to conventional driver with passive back-termination. Moreover, for pervasive adaptation, the active back-termination is tunable with reference resistor to match the characteristic impedance of transmission line. At the meantime, we use a pre-distortion circuit to compensate the on/off asymmetry of the laser diode. In order to achieve a higher data rate under the bandwidth limitation, the quadri-pulse amplitude modulation is used. In this way the total data rate is doubled under the same bandwidth. The Gray code is adopted to reduce the bit error rate (BER), since there is only one-bit changed between different levels. The laser diode driver is fabricated in TSMC 90nm CMOS process. Under 1.2Vand1.8V supply, the delivered data rate can reach 16Gbps, power consumption is about 100mW, and the die area is 0.53mm2.
author2 Chen, Wei-Zen
author_facet Chen, Wei-Zen
Su, Kai-Ti
蘇凱悌
author Su, Kai-Ti
蘇凱悌
spellingShingle Su, Kai-Ti
蘇凱悌
A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination
author_sort Su, Kai-Ti
title A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination
title_short A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination
title_full A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination
title_fullStr A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination
title_full_unstemmed A 4-PAM 20-Gbps CMOS Laser Driver with Tunable Active Back-Termination
title_sort 4-pam 20-gbps cmos laser driver with tunable active back-termination
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/70861542907795658014
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