Characterization of Transparent Resistive Random Access Memory Devices Based on HfO2/Al2O3 Multi-layer Stacking as Resistive Switching Film

• Main Authors: Wun, Yue- Jia, 溫岳嘉
• Other Authors: Chang, Kow-Ming
• Format: Others
• Language: en_US
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/83320351285372293764

碩士 === 國立交通大學 === 電子研究所 === 99 === We first demonstrate the resistive switching characteristics of Transparent Resistive Random Access Memory Devices (TRRAM) with HfO2/Al2O3 multi-layer stacking via different ALD deposition cycles as resistive switching films for 9-cycle, 19-cycle and 38-cycle devices respectively. The-9-cycle device has the best performance of endurance times, average set operation voltage, standard deviation of set voltage distribution; average reset operation voltage, standard deviation of reset voltage distribution than the other two (19-cycle and 38-cycle) . For the reason that Al2O3 spread out more in resistive switching layers of the 38-cycle device, it is more difficult to form stable conducting filaments. In addition, our 9-cycle device with endurance times, set/reset operation voltage and standard deviation of reset voltage distribution is relatively excellent compare to recent published transparency memory devices. It was claimed that oxygen vacancy forming energy could be lower down by Al atoms which leads conducting filaments formed more stable in previous non-transparent RRAM. Even though, the performances of TRRAM in this thesis are still not comparable to non-transparent RRAM. To the best of our knowledge, we first apply this mechanism to control the conducting filament formation in TRRAM. Not only echo the previous study of the mechanism but also demonstrate TRRAM with the higher performance. The multi-layer stacking as the resistive switching films in TRRAM shows great potential in the future modern electronics.