| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 99 === Self-consistent solving of Schrődinger and Poisson equations in n-channel MOSFETs (metal-oxide-semiconductor field-effect transistors) is obtained by using Newton-Raphson iteration technique with the non-uniform mesh arrangement. The method is applied to simulate more realistic physical environment than triangular potential well approximation in nano devices. The simulation results show excellent agreements with Schred’s. However, in p-channel MOSFETs, a six-band model has been used to calculate hole subband structure and mobility for different surface orientations and different strains. In this work, we introduce a new efficient model based on six-band Hamiltonian to rapidly obtain accurate hole properties. In order to ensure the validity of our work, we build an effective mobility model in the hole inversion layer and compare the results with the experimental data concerning the universal curves at different temperatures. The different scattering mechanisms are included in this study: acoustic phonon scattering, optical phonon scattering and surface roughness scattering. To focus on the high surface field region, Coulomb scattering due to ionized impurities will be ignored. In addition, with the use of an equivalent effective mass model, the extracted quantization effective mass and density of states effective mass will be compared with low temperature (2 K) Shubnikov-de Haas oscillation experiment results published in the literature.
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